Microchip N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN DN2625DK6-G
- RS Stock No.:
- 916-3725P
- Mfr. Part No.:
- DN2625DK6-G
- Brand:
- Microchip
Subtotal 5 units (supplied in a tray)*
£9.80
(exc. VAT)
£11.75
(inc. VAT)
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In Stock
- 1,415 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £1.96 |
*price indicative
- RS Stock No.:
- 916-3725P
- Mfr. Part No.:
- DN2625DK6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.1 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Depletion | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.1mm | |
| Transistor Material | Si | |
| Length | 5.1mm | |
| Typical Gate Charge @ Vgs | 7.04 nC @ 1.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.8V | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.1 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Depletion | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 5.1mm | ||
Transistor Material Si | ||
Length 5.1mm | ||
Typical Gate Charge @ Vgs 7.04 nC @ 1.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.85mm | ||
Forward Diode Voltage 1.8V | ||
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads
MOSFET Transistors, Microchip