Microchip N-Channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 2N7008-G

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Packaging Options:
RS Stock No.:
916-3721
Mfr. Part No.:
2N7008-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.06mm

Maximum Operating Temperature

+150 °C

Length

5.08mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.33mm

Forward Diode Voltage

1.5V

2N7008 N-Channel MOSFET Transistors


The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features


Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain

The Microchip 2N7008 N-channel enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS device. This device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Lead (Pb)-free


MOSFET Transistors, Microchip

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