The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low C_ISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain

The Microchip 2N7008 N-channel enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS device. This device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Lead (Pb)-free

MOSFET Transistors, Microchip