Wolfspeed SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK C2M1000170J
- RS Stock No.:
- 915-8833P
- Mfr. Part No.:
- C2M1000170J
- Brand:
- Wolfspeed
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£71.90
(exc. VAT)
£86.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 22 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 18 | £7.19 |
| 20 - 48 | £7.01 |
| 50 - 98 | £6.83 |
| 100 + | £6.635 |
*price indicative
- RS Stock No.:
- 915-8833P
- Mfr. Part No.:
- C2M1000170J
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.3 A | |
| Maximum Drain Source Voltage | 1700 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 78 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Typical Gate Charge @ Vgs | 13 nC @ 20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Length | 10.23mm | |
| Width | 10.99mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 3.8V | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 1700 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Typical Gate Charge @ Vgs 13 nC @ 20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
Length 10.23mm | ||
Width 10.99mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 3.8V | ||
Height 4.57mm | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed