Infineon HEXFET N-Channel MOSFET, 195 A, 150 V, 3-Pin D2PAK IRFS4115TRLPBF
- RS Stock No.:
- 915-5033
- Mfr. Part No.:
- IRFS4115TRLPBF
- Brand:
- Infineon
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Subtotal (1 pack of 4 units)*
£12.40
(exc. VAT)
£14.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 192 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | £3.10 | £12.40 |
| 20 - 36 | £2.79 | £11.16 |
| 40 - 96 | £2.605 | £10.42 |
| 100 - 196 | £2.42 | £9.68 |
| 200 + | £2.23 | £8.92 |
*price indicative
- RS Stock No.:
- 915-5033
- Mfr. Part No.:
- IRFS4115TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 77 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 11.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 77 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 11.3mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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