Infineon OptiMOS™ 5 N-Channel MOSFET, 40 A, 60 V, 8-Pin TDSON BSZ042N06NSATMA1
- RS Stock No.:
- 906-4390
- Mfr. Part No.:
- BSZ042N06NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.60
(exc. VAT)
£12.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,190 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.06 | £10.60 |
| 100 - 490 | £0.857 | £8.57 |
| 500 - 990 | £0.666 | £6.66 |
| 1000 - 2490 | £0.564 | £5.64 |
| 2500 + | £0.549 | £5.49 |
*price indicative
- RS Stock No.:
- 906-4390
- Mfr. Part No.:
- BSZ042N06NSATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 6.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Length 3.4mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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