onsemi SuperFET N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM
- RS Stock No.:
- 903-4131P
- Mfr. Part No.:
- FCD7N60TM
- Brand:
- onsemi
Subtotal 5 units (supplied on a continuous strip)*
£10.51
(exc. VAT)
£12.61
(inc. VAT)
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Units | Per unit |
---|---|
5 + | £2.102 |
*price indicative
- RS Stock No.:
- 903-4131P
- Mfr. Part No.:
- FCD7N60TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 7 A | |
Maximum Drain Source Voltage | 600 V | |
Series | SuperFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 600 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 83 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Width | 6.22mm | |
Transistor Material | Si | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.4V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 600 V | ||
Series SuperFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Transistor Material Si | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.