onsemi N-Channel MOSFET, 210 mA, 50 V, 3-Pin SOT-323 BSS138W
- RS Stock No.:
- 903-4112P
- Mfr. Part No.:
- BSS138W
- Brand:
- onsemi
Bulk discount available
Subtotal 500 units (supplied on a reel)*
£34.00
(exc. VAT)
£41.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 16,100 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 500 - 900 | £0.068 |
| 1000 + | £0.059 |
*price indicative
- RS Stock No.:
- 903-4112P
- Mfr. Part No.:
- BSS138W
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 210 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 340 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 1.25mm | |
| Transistor Material | Si | |
| Length | 2mm | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 10 V | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.9mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 210 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 340 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 1.25mm | ||
Transistor Material Si | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 1.1 nC @ 10 V | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.9mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.