Infineon CoolMOS CP Type N-Channel MOSFET, 17 A, 550 V Enhancement, 3-Pin TO-220 IPA50R199CPXKSA1

RS Stock No.:: 897-7453
Mfr. Part No.:: IPA50R199CPXKSA1
Brand:: Infineon

Infineon CoolMOS CP Type N-Channel MOSFET, 17 A, 550 V Enhancement, 3-Pin TO-220 IPA50R199CPXKSA1

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Subtotal (1 pack of 4 units)*

£11.60

(exc. VAT)

£13.92

(inc. VAT)

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Temporarily out of stock

Shipping from 11 June 2026

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Units	Per unit	Per Pack*
4 - 16	£2.90	£11.60
20 - 36	£2.753	£11.01
40 - 96	£2.48	£9.92
100 - 196	£2.23	£8.92
200 +	£2.12	£8.48

*price indicative

RS Stock No.:: 897-7453
Mfr. Part No.:: IPA50R199CPXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	550V
	Package Type	TO-220
	Series	CoolMOS CP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	199mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	139W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Width	4.85 mm
	Standards/Approvals	No
	Height	16.15mm
	Length	10.65mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 550V
	Package Type TO-220
	Series CoolMOS CP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 199mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 139W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Width 4.85 mm
	Standards/Approvals No
	Height 16.15mm
	Length 10.65mm
	Automotive Standard No

Infineon CoolMOS CP Series MOSFET, 17A Maximum Continuous Drain Current, 139W Maximum Power Dissipation - IPA50R199CPXKSA1

This MOSFET is a high-performance component suitable for various applications in the automation, electronics, and electrical sectors. It addresses the need for efficient power management and control, thereby enhancing overall system performance. With features such as high continuous drain current capacity and substantial voltage handling, it is an important choice for Advanced electronic designs.

Features & Benefits

• Maximum continuous drain current of 17A for robust power delivery

• Maximum drain-source voltage of 550V for diverse applications

• Low Rds(on) at 199mΩ for enhanced efficiency

• Enhancement mode design for improved switching characteristics

• TO-220 FP package for straightforward installation

• High power dissipation of 139W suitable for challenging environments

Applications

• High power converters to improve energy efficiency

• Motor control that require high current

• Industrial automation systems for increased reliability

• Switch-mode power supplies that need efficient components

What are the thermal limits for usage?

The product operates between -55°C and +150°C, providing versatility for various environments.

How does the gate threshold voltage impact performance?

The gate threshold voltage varies from 2.5V to 3.5V, optimising switching performance according to circuit conditions.

What packaging options are available for this component?

It comes in a TO-220 FP package, facilitating through-hole mounting for easy integration into circuits.

Is the component suitable for high-frequency applications?

Yes, it typically operates with a gate charge of 34nC at 10V, allowing it to function efficiently in high-frequency applications.

How do I ensure proper installation?

Refer to the datasheet recommendations for mounting and connections to achieve optimal performance and safety during use.