Infineon CoolMOS CP N-Channel MOSFET, 17 A, 550 V, 3-Pin TO-220 FP IPA50R199CPXKSA1

RS Stock No.:: 897-7453
Mfr. Part No.:: IPA50R199CPXKSA1
Brand:: Infineon

Infineon CoolMOS CP N-Channel MOSFET, 17 A, 550 V, 3-Pin TO-220 FP IPA50R199CPXKSA1

Subtotal (1 pack of 4 units)*

£4.14

(exc. VAT)

£4.968

(inc. VAT)

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Shipping from 13 February 2026

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Units	Per unit	Per Pack*
4 +	£1.035	£4.14

*price indicative

RS Stock No.:: 897-7453
Mfr. Part No.:: IPA50R199CPXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	17 A
	Maximum Drain Source Voltage	550 V
	Package Type	TO-220 FP
	Series	CoolMOS CP
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	199 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	139 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	34 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Length	10.65mm
	Width	4.85mm
	Height	16.15mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 17 A
	Maximum Drain Source Voltage 550 V
	Package Type TO-220 FP
	Series CoolMOS CP
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 199 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 139 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 34 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Length 10.65mm
	Width 4.85mm
	Height 16.15mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

Infineon CoolMOS™CP Power MOSFET

Infineon CoolMOS CP Series MOSFET, 17A Maximum Continuous Drain Current, 139W Maximum Power Dissipation - IPA50R199CPXKSA1

This MOSFET is a high-performance component suitable for various applications in the automation, electronics, and electrical sectors. It addresses the need for efficient power management and control, thereby enhancing overall system performance. With features such as high continuous drain current capacity and substantial voltage handling, it is an important choice for advanced electronic designs.

Features & Benefits

• Maximum continuous drain current of 17A for robust power delivery
• Maximum drain-source voltage of 550V for diverse applications
• Low Rds(on) at 199mΩ for enhanced efficiency
• Enhancement mode design for improved switching characteristics
• TO-220 FP package for straightforward installation
• High power dissipation of 139W suitable for challenging environments

Applications

• High power converters to improve energy efficiency
• Motor control that require high current
• Industrial automation systems for increased reliability
• Switch-mode power supplies that need efficient components

What are the thermal limits for usage?

The product operates between -55°C and +150°C, providing versatility for various environments.

How does the gate threshold voltage impact performance?

The gate threshold voltage varies from 2.5V to 3.5V, optimising switching performance according to circuit conditions.

What packaging options are available for this component?

It comes in a TO-220 FP package, facilitating through-hole mounting for easy integration into circuits.

Is the component suitable for high-frequency applications?

Yes, it typically operates with a gate charge of 34nC at 10V, allowing it to function efficiently in high-frequency applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.