Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1
- RS Stock No.:
- 897-7400
- Mfr. Part No.:
- IPA60R199CPXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
£11.68
(exc. VAT)
£14.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 276 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | £2.92 | £11.68 |
| 20 - 36 | £2.775 | £11.10 |
| 40 - 96 | £2.658 | £10.632 |
| 100 - 196 | £2.483 | £9.932 |
| 200 + | £2.335 | £9.34 |
*price indicative
- RS Stock No.:
- 897-7400
- Mfr. Part No.:
- IPA60R199CPXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS CP | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 199 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.85mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Length | 10.65mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 16.15mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS CP | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.85mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Length 10.65mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 16.15mm | ||
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