Infineon CoolMOS CP N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 IPW60R165CPFKSA1

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Packaging Options:
RS Stock No.:
110-7743
Mfr. Part No.:
IPW60R165CPFKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS CP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

192 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

39 nC @ 10 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Minimum Operating Temperature

-55 °C

Height

21.1mm

Forward Diode Voltage

1.2V

Infineon CoolMOS™CP Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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