Infineon CoolMOS CP N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 IPW60R165CPFKSA1
- RS Stock No.:
- 110-7743
- Mfr. Part No.:
- IPW60R165CPFKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
£17.92
(exc. VAT)
£21.52
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 60 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | £4.48 | £17.92 |
| 8 - 16 | £4.255 | £17.02 |
| 20 - 36 | £4.078 | £16.312 |
| 40 - 96 | £3.898 | £15.592 |
| 100 + | £3.63 | £14.52 |
*price indicative
- RS Stock No.:
- 110-7743
- Mfr. Part No.:
- IPW60R165CPFKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS CP | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 192 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS CP | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 192 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
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