STMicroelectronics MDmesh M2 N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220FP STF12N65M2
- RS Stock No.:
- 876-5639
- Mfr. Part No.:
- STF12N65M2
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£7.57
(exc. VAT)
£9.085
(inc. VAT)
FREE delivery for orders over £50.00
- Final 55 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.514 | £7.57 |
| 25 - 45 | £1.44 | £7.20 |
| 50 - 120 | £1.294 | £6.47 |
| 125 - 245 | £1.166 | £5.83 |
| 250 + | £1.106 | £5.53 |
*price indicative
- RS Stock No.:
- 876-5639
- Mfr. Part No.:
- STF12N65M2
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220FP | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Height | 16.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220FP | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 16.5 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
Height 16.4mm | ||
- COO (Country of Origin):
- CN
N-channel MDmesh™ M2 Series, STMicroelectronics
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