onsemi N-Channel MOSFET, 46 A, 30 V, 8-Pin SO-8FL NTMFS4C10NT1G
- RS Stock No.:
- 867-3268P
- Mfr. Part No.:
- NTMFS4C10NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£25.60
(exc. VAT)
£30.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.256 |
| 250 + | £0.222 |
*price indicative
- RS Stock No.:
- 867-3268P
- Mfr. Part No.:
- NTMFS4C10NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 46 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8FL | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 23.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.1mm | |
| Typical Gate Charge @ Vgs | 18.6 nC @ 10 V | |
| Width | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8FL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 23.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 18.6 nC @ 10 V | ||
Width 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
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