STMicroelectronics MDmesh M2 N-Channel MOSFET, 3.5 A, 650 V, 3-Pin TO-220 STP5N60M2
- RS Stock No.:
- 829-4433
- Mfr. Part No.:
- STP5N60M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.95
(exc. VAT)
£7.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 85 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.19 | £5.95 |
| 25 - 45 | £1.13 | £5.65 |
| 50 - 120 | £1.016 | £5.08 |
| 125 - 245 | £0.916 | £4.58 |
| 250 + | £0.87 | £4.35 |
*price indicative
- RS Stock No.:
- 829-4433
- Mfr. Part No.:
- STP5N60M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Height 15.75mm | ||
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