N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W,S1VX(S

Subtotal 4 units (supplied in a bag)*

£5.98

(exc. VAT)

£7.176

(inc. VAT)

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Units
Per unit
4 +£1.495

*price indicative

Packaging Options:
RS Stock No.:
827-6148P
Mfr. Part No.:
TK16E60W,S1VX(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.45mm

Typical Gate Charge @ Vgs

38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.16mm

Number of Elements per Chip

1

Series

TK

Height

15.1mm

COO (Country of Origin):
CN