Texas Instruments NexFET N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 CSD19536KCS

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

259 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Width

4.7mm

Typical Gate Charge @ Vgs

118 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

16.51mm