Infineon SIPMOS® N-Channel MOSFET, 110 mA, 240 V, 3-Pin SOT-23 BSS131H6327XTSA1
- RS Stock No.:
- 827-0070
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 250 units)*
£35.50
(exc. VAT)
£42.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 500 unit(s) shipping from 13 October 2025
- Plus 4,000 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 250 | £0.142 | £35.50 |
| 500 - 1000 | £0.075 | £18.75 |
| 1250 - 2250 | £0.071 | £17.75 |
| 2500 - 6000 | £0.065 | £16.25 |
| 6250 + | £0.061 | £15.25 |
*price indicative
- RS Stock No.:
- 827-0070
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 mA | |
| Maximum Drain Source Voltage | 240 V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 mA | ||
Maximum Drain Source Voltage 240 V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 2.1 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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