Infineon CoolMOS™ C3 N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220 FP SPA08N80C3XKSA1
- RS Stock No.:
- 823-5645
- Mfr. Part No.:
- SPA08N80C3XKSA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£4.22
(exc. VAT)
£5.06
(inc. VAT)
FREE delivery for orders over £50.00
- Final 8 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.11 | £4.22 |
20 - 48 | £1.90 | £3.80 |
50 - 98 | £1.775 | £3.55 |
100 - 198 | £1.67 | £3.34 |
200 + | £1.54 | £3.08 |
*price indicative
- RS Stock No.:
- 823-5645
- Mfr. Part No.:
- SPA08N80C3XKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 800 V | |
Series | CoolMOS™ C3 | |
Package Type | TO-220 FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.5 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 4.85mm | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Length | 10.65mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.2V | |
Height | 16.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.85mm | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Length 10.65mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 16.15mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™C3 Power MOSFET
Infineon CoolMOS™ C3 Series MOSFET, 8A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - SPA08N80C3XKSA1
Features & Benefits
• Withstands drain-source voltages up to 800V
• Low on-state resistance enhances efficiency
• Ultra-low gate charge facilitates faster operation
• Robust performance across a wide temperature range
• Fully isolated packaging for enhanced safety
Applications
• Suitable for active clamp forward switching
• Applicable in power conversion systems
• Employed in automation processes and electrical control systems
What is the operating temperature range for use?
How can the thermal performance be maintained during operation?
Can this be used in repetitive avalanche conditions?
What is the significance of having ultra-low effective capacitances?
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