Infineon CoolMOS C3 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220FP SPA08N80C3XKSA1

RS Stock No.:: 823-5645
Mfr. Part No.:: SPA08N80C3XKSA1
Brand:: Infineon

Infineon CoolMOS C3 Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220FP SPA08N80C3XKSA1

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RS Stock No.:: 823-5645
Mfr. Part No.:: SPA08N80C3XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS C3
	Package Type	TO-220FP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	40W
	Maximum Operating Temperature	150°C
	Width	4.85 mm
	Length	10.65mm
	Height	16.15mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS C3
	Package Type TO-220FP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 40W
	Maximum Operating Temperature 150°C
	Width 4.85 mm
	Length 10.65mm
	Height 16.15mm
	Standards/Approvals No
	Automotive Standard No

Infineon CoolMOS™ C3 Series MOSFET, 8A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - SPA08N80C3XKSA1

This power transistor is designed for high voltage applications, focusing on efficiency and thermal management. It serves as a vital component in contemporary industrial applications.

Features & Benefits

• Maximum continuous drain current of 8A

• Withstands drain-source voltages up to 800V

• Low on-state resistance enhances efficiency

• Ultra-low gate charge facilitates faster operation

• Robust performance across a wide temperature range

• Fully isolated packaging for enhanced safety

Applications

• Utilised in industrial equipment requiring high DC bulk voltages

• Suitable for active clamp forward switching

• Applicable in power conversion systems

• Employed in automation processes and electrical control systems

What is the operating temperature range for use?

The product operates effectively from -55°C to +150°C, providing stability across diverse environments.

How can the thermal performance be maintained during operation?

Adequate heat dissipation is crucial; the junction-case thermal resistance is measured at 3.8 K/W.

Can this be used in repetitive avalanche conditions?

Yes, it is rated for repetitive avalanche conditions, with specified energy limits outlined in the product specifications.

What is the significance of having ultra-low effective capacitances?

Ultra-low effective capacitances enhance switching performance and minimise energy losses during transitions.

How should I install this product in my circuit?

Utilise through-hole mounting in a TO-220 package, ensuring appropriate torque on the mounting screws to avoid damage.

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Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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