onsemi PowerTrench P-Channel MOSFET, 8.4 A, 40 V, 3-Pin DPAK FDD4685
- RS Stock No.:
- 809-0893P
- Mfr. Part No.:
- FDD4685
- Brand:
- onsemi
Subtotal 100 units (supplied on a continuous strip)*
£52.30
(exc. VAT)
£62.80
(inc. VAT)
FREE delivery for orders over £50.00
- 6,050 unit(s) ready to ship
Units | Per unit |
---|---|
100 - 240 | £0.523 |
250 - 490 | £0.454 |
500 - 990 | £0.399 |
1000 + | £0.363 |
*price indicative
- RS Stock No.:
- 809-0893P
- Mfr. Part No.:
- FDD4685
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 8.4 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 69 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 6.22mm | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 19 nC @ 5 V | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 19 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.