onsemi PowerTrench P-Channel MOSFET, 3.6 A, 30 V, 6-Pin SOT-23 FDC654P
- RS Stock No.:
- 809-0862
- Mfr. Part No.:
- FDC654P
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 20 units)*
£6.32
(exc. VAT)
£7.58
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 4,940 unit(s), ready to ship
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | £0.316 | £6.32 |
| 200 - 480 | £0.273 | £5.46 |
| 500 - 980 | £0.236 | £4.72 |
| 1000 - 1980 | £0.208 | £4.16 |
| 2000 + | £0.189 | £3.78 |
*price indicative
- RS Stock No.:
- 809-0862
- Mfr. Part No.:
- FDC654P
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.2 nC @ 10 V | ||
Width 1.7mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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