onsemi PowerTrench P-Channel MOSFET, 4 A, 30 V, 6-Pin SOT-23 FDC658P
- RS Stock No.:
- 671-0359
- Mfr. Part No.:
- FDC658P
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.70
(exc. VAT)
£4.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 740 unit(s) shipping from 08 September 2025
- Plus 999,999,255 unit(s) shipping from 15 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.74 | £3.70 |
| 50 - 95 | £0.638 | £3.19 |
| 100 - 495 | £0.554 | £2.77 |
| 500 - 995 | £0.486 | £2.43 |
| 1000 + | £0.442 | £2.21 |
*price indicative
- RS Stock No.:
- 671-0359
- Mfr. Part No.:
- FDC658P
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8 nC @ 5 V | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8 nC @ 5 V | ||
Width 1.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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