P-Channel MOSFET, 4 A, 30 V, 6-Pin SOT-23 onsemi FDC658AP
- RS Stock No.:
- 739-0186
- Mfr. Part No.:
- FDC658AP
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
£2.49
(exc. VAT)
£2.99
(inc. VAT)
5 In stock - FREE next working day delivery available*
50 available from Europe for delivery within 2 working day(s).
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
|---|---|---|
| 5 - 45 | £0.498 | £2.49 |
| 50 - 95 | £0.43 | £2.15 |
| 100 - 495 | £0.372 | £1.86 |
| 500 - 995 | £0.328 | £1.64 |
| 1000 + | £0.298 | £1.49 |
**price indicative
- RS Stock No.:
- 739-0186
- Mfr. Part No.:
- FDC658AP
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 6 nC @ 5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Width 1.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 6 nC @ 5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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