IXYS HiperFET, Polar3 N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-247 IXFH60N50P3
- RS Stock No.:
- 802-4382
- Distrelec Article No.:
- 302-53-330
- Mfr. Part No.:
- IXFH60N50P3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£8.69
(exc. VAT)
£10.43
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 11 unit(s) ready to ship
- Plus 18 unit(s) shipping from 30 October 2025
- Plus 30 unit(s) shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £8.69 |
| 2 - 4 | £8.26 |
| 5 - 9 | £8.00 |
| 10 - 14 | £7.82 |
| 15 + | £7.48 |
*price indicative
- RS Stock No.:
- 802-4382
- Distrelec Article No.:
- 302-53-330
- Mfr. Part No.:
- IXFH60N50P3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 1.04 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V | |
| Length | 16.26mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.46mm | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 1.04 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 96 nC @ 10 V | ||
Length 16.26mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 21.46mm | ||
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