IXYS HiperFET, Polar3 N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3
- RS Stock No.:
- 802-4372
- Distrelec Article No.:
- 302-53-320
- Mfr. Part No.:
- IXFH34N50P3
- Brand:
- IXYS
Subtotal (1 unit)*
£8.11
(exc. VAT)
£9.73
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 300 unit(s) shipping from 05 November 2025
- Plus 999,999,699 unit(s) shipping from 18 June 2026
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Units | Per unit |
|---|---|
| 1 + | £8.11 |
*price indicative
- RS Stock No.:
- 802-4372
- Distrelec Article No.:
- 302-53-320
- Mfr. Part No.:
- IXFH34N50P3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 695 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.3mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 695 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 16.26mm | ||
Height 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
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