IXYS HiperFET, Q3-Class N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3
- RS Stock No.:
- 801-1433P
- Mfr. Part No.:
- IXFR24N100Q3
- Brand:
- IXYS
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£263.30
(exc. VAT)
£316.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 30 unit(s) shipping from 07 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 19 | £26.33 |
| 20 - 49 | £25.16 |
| 50 - 249 | £24.28 |
| 250 + | £23.78 |
*price indicative
- RS Stock No.:
- 801-1433P
- Mfr. Part No.:
- IXFR24N100Q3
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | ISOPLUS247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 490 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 500 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5.21mm | |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 21.34mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series HiperFET, Q3-Class | ||
Package Type ISOPLUS247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 490 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 500 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.21mm | ||
Typical Gate Charge @ Vgs 140 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 21.34mm | ||
Minimum Operating Temperature -55 °C | ||