Nexperia N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 BSS138PW,115
- RS Stock No.:
- 792-0904
- Mfr. Part No.:
- BSS138PW,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 reel of 100 units)*
£4.90
(exc. VAT)
£5.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 17,100 unit(s) ready to ship
- Plus 2,300 unit(s) ready to ship from another location
- Plus 300 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 100 - 100 | £0.049 | £4.90 |
| 200 - 400 | £0.042 | £4.20 |
| 500 - 900 | £0.038 | £3.80 |
| 1000 - 1900 | £0.023 | £2.30 |
| 2000 + | £0.022 | £2.20 |
*price indicative
- RS Stock No.:
- 792-0904
- Mfr. Part No.:
- BSS138PW,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 320 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 310 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 0.72 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 320 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 310 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 0.72 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 1.35mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
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