Nexperia Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 BSS138PS,115
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 reel of 40 units)*
£8.64
(exc. VAT)
£10.36
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 520 unit(s) ready to ship
- Plus 360 unit(s) shipping from 19 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 40 - 360 | £0.216 | £8.64 |
| 400 - 760 | £0.195 | £7.80 |
| 800 + | £0.173 | £6.92 |
*price indicative
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 320 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 320 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 0.72 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Length | 2.2mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 320 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 320 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 0.72 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Length 2.2mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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