onsemi N-Channel MOSFET, 2.5 A, 30 V, 3-Pin SOT-23 NTR4503NT1G
- RS Stock No.:
- 780-4751P
- Mfr. Part No.:
- NTR4503NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£18.20
(exc. VAT)
£21.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 14,400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.182 |
| 250 - 475 | £0.158 |
| 500 - 975 | £0.139 |
| 1000 + | £0.126 |
*price indicative
- RS Stock No.:
- 780-4751P
- Mfr. Part No.:
- NTR4503NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 730 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 1.9 nC @ 4.5 V, 3.6 nC @ 10 V | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.01mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 730 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 1.9 nC @ 4.5 V, 3.6 nC @ 10 V | ||
Width 1.4mm | ||
Length 3.04mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.01mm | ||
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