onsemi Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G
- RS Stock No.:
- 780-0674P
- Mfr. Part No.:
- NTMD4N03R2G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£44.50
(exc. VAT)
£53.40
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 2,500 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.445 |
| 250 - 490 | £0.386 |
| 500 - 990 | £0.339 |
| 1000 + | £0.308 |
*price indicative
- RS Stock No.:
- 780-0674P
- Mfr. Part No.:
- NTMD4N03R2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V dc | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8 nC @ 10 V dc | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor