onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G
- RS Stock No.:
- 780-0611P
- Mfr. Part No.:
- NTJD4152PT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£17.60
(exc. VAT)
£21.10
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 23,150 left, shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.176 |
| 250 - 475 | £0.153 |
| 500 - 975 | £0.134 |
| 1000 + | £0.122 |
*price indicative
- RS Stock No.:
- 780-0611P
- Mfr. Part No.:
- NTJD4152PT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 880 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 2.2 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 880 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 2.2 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor