onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
- RS Stock No.:
- 780-0605P
- Mfr. Part No.:
- NTJD1155LT1G
- Brand:
- onsemi
Subtotal 20 units (supplied on a continuous strip)*
£4.04
(exc. VAT)
£4.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,480 unit(s) shipping from 10 November 2025
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Units | Per unit |
|---|---|
| 20 + | £0.202 |
*price indicative
- RS Stock No.:
- 780-0605P
- Mfr. Part No.:
- NTJD1155LT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.3 A | |
| Maximum Drain Source Voltage | 8 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 320 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | N+P Loadswitch | |
| Maximum Gate Source Voltage | +8 V | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 8 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 320 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration N+P Loadswitch | ||
Maximum Gate Source Voltage +8 V | ||
Transistor Material Si | ||
Width 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor