STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 STP26NM60N
- RS Stock No.:
- 761-0083
- Mfr. Part No.:
- STP26NM60N
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£5.63
(exc. VAT)
£6.76
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1 unit(s) ready to ship
- Plus 45 unit(s) shipping from 12 September 2025
- Plus 50 unit(s) shipping from 17 September 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £5.63 |
| 10 - 24 | £5.07 |
| 25 - 99 | £4.81 |
| 100 - 499 | £3.84 |
| 500 + | £3.41 |
*price indicative
- RS Stock No.:
- 761-0083
- Mfr. Part No.:
- STP26NM60N
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | MDmesh | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 165 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 165 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Height 15.75mm | ||
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