STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 STP26NM60N
- RS Stock No.:
- 168-7500
- Mfr. Part No.:
- STP26NM60N
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
£155.00
(exc. VAT)
£186.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 50 unit(s) shipping from 09 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.10 | £155.00 |
| 100 - 450 | £2.474 | £123.70 |
| 500 - 950 | £2.198 | £109.90 |
| 1000 - 4950 | £1.848 | £92.40 |
| 5000 + | £1.795 | £89.75 |
*price indicative
- RS Stock No.:
- 168-7500
- Mfr. Part No.:
- STP26NM60N
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 165 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 165 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 10.4mm | ||
Width 4.6mm | ||
Height 15.75mm | ||
Related links
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220 STP26NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220FP STP20NM60FP
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-247 STW26NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-247 STW20NM60
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220FP STF26NM60N
- STMicroelectronics MDmesh N-Channel MOSFET Transistor 600 V, 3-Pin I2PAK STI26NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220 STP10NM60N
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220 STP18NM60N