STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.2 A, 800 V, 3-Pin D2PAK STB7NK80ZT4
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£12.88
(exc. VAT)
£15.455
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 115 unit(s) ready to ship
- Plus 5 unit(s) ready to ship from another location
- Plus 300 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £2.576 | £12.88 |
| 10 - 95 | £2.182 | £10.91 |
| 100 - 495 | £1.71 | £8.55 |
| 500 - 995 | £1.452 | £7.26 |
| 1000 + | £1.198 | £5.99 |
*price indicative
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 10.4mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.75mm | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh, SuperMESH | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 10.4mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 10.75mm | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
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