STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 5.2 A, 800 V Enhancement, 3-Pin TO-263 STB7NK80ZT4
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£14.60
(exc. VAT)
£17.50
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 10 unit(s) shipping from 01 June 2026
- Plus 45 unit(s) shipping from 05 June 2026
- Plus 240 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £2.92 | £14.60 |
| 10 - 95 | £2.474 | £12.37 |
| 100 - 495 | £1.94 | £9.70 |
| 500 - 995 | £1.646 | £8.23 |
| 1000 + | £1.358 | £6.79 |
*price indicative
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 10.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series MDmesh, SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 10.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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