onsemi PowerTrench Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141

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Subtotal (1 pack of 2 units)*

£4.82

(exc. VAT)

£5.78

(inc. VAT)

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Per Pack*
2 - 18£2.41£4.82
20 - 198£2.075£4.15
200 - 998£1.80£3.60
1000 +£1.585£3.17

*price indicative

Packaging Options:
RS Stock No.:
759-9699
Mfr. Part No.:
FDS89141
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

107 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

31 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

5.1 nC @ 10 V

Transistor Material

Si

Length

4mm

Width

5mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.5mm

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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