onsemi PowerTrench N-Channel MOSFET, 3.4 A, 100 V, 8-Pin SOIC FDS86106
- RS Stock No.:
- 759-9686
- Mfr. Part No.:
- FDS86106
- Brand:
- onsemi
Subtotal (1 tape of 5 units)*
£1.57
(exc. VAT)
£1.885
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,585 unit(s), ready to ship
Units | Per unit | Per Tape* |
---|---|---|
5 + | £0.314 | £1.57 |
*price indicative
- RS Stock No.:
- 759-9686
- Mfr. Part No.:
- FDS86106
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.4 A | |
Maximum Drain Source Voltage | 100 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 177 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 5mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 4mm | |
Typical Gate Charge @ Vgs | 3 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 177 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 4mm | ||
Typical Gate Charge @ Vgs 3 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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