Infineon OptiMOS™ 3 N-Channel MOSFET, 98 A, 120 V, 8-Pin TDSON BSC077N12NS3GATMA1

Subtotal (1 unit)*

£1.86

(exc. VAT)

£2.23

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 3,429 unit(s) shipping from 16 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£1.86

*price indicative

Packaging Options:
RS Stock No.:
754-5285
Mfr. Part No.:
BSC077N12NS3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

98 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™ 3

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.1mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Length

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links