P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1

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Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
RS Stock No.
462-3247

Each (In a Pack of 10)

£0.499

(exc. VAT)

£0.599

(inc. VAT)

RS Stock No.:
753-3188
Mfr. Part No.:
SPD08P06PGBTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

SIPMOS