Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£4.99
(exc. VAT)
£5.99
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 280 unit(s) ready to ship
- Plus 4,100 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.499 | £4.99 |
| 100 - 240 | £0.474 | £4.74 |
| 250 - 490 | £0.455 | £4.55 |
| 500 - 990 | £0.434 | £4.34 |
| 1000 + | £0.404 | £4.04 |
*price indicative
- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.55V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.55V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1
This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.
Features & Benefits
• Enhanced mode operation ensures efficient switching performance
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
Applications
• Applicable in automotive electronic controls for high reliability
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
What are the implications of using a P-channel configuration?
P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.
How does the thermal performance affect longevity?
The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.
What is the significance of the AEC-Q101 qualification?
This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.
Can this be used in conjunction with other MOSFETs?
Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.
What factors influence the power dissipation in this device?
Key factors include ambient temperature, drain current, and duty cycle during operation, all affecting overall thermal performance.
Related links
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R1K0PFD7SAUMA1
- Vishay P-Channel MOSFET 60 V DPAK IRFR9024PBF
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 3-Pin DPAK IPD053N06NATMA1
- onsemi N-Channel MOSFET 60 V, 3-Pin DPAK NTD18N06LT4G
- Vishay P-Channel MOSFET 60 V, 3-Pin DPAK IRFR9014TRPBF
- Toshiba N-Channel MOSFET 60 V, 3-Pin DPAK TK60S06K3L
- onsemi P-Channel MOSFET 30 V, 8-Pin SOIC FDS4435BZ


