Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£4.51
(exc. VAT)
£5.41
(inc. VAT)
FREE delivery for orders over £50.00
- 300 unit(s) ready to ship
- Plus 4,100 unit(s) shipping from 31 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.451 | £4.51 |
| 100 - 240 | £0.428 | £4.28 |
| 250 - 490 | £0.411 | £4.11 |
| 500 - 990 | £0.392 | £3.92 |
| 1000 + | £0.365 | £3.65 |
*price indicative
- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8.8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | SIPMOS® | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.55V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.8 A | ||
Maximum Drain Source Voltage 60 V | ||
Series SIPMOS® | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.5mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.55V | ||
Infineon SIPMOS® P-Channel MOSFETs
· Pb-free lead plating, RoHS compliant
Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1
Features & Benefits
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
Applications
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
What are the implications of using a P-channel configuration?
How does the thermal performance affect longevity?
What is the significance of the AEC-Q101 qualification?
Can this be used in conjunction with other MOSFETs?
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