Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
- RS Stock No.:
- 743-6030
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
Bulk discount available
Subtotal (1 pack of 25 units)*
£6.975
(exc. VAT)
£8.375
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 22,775 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.279 | £6.98 |
| 250 - 475 | £0.235 | £5.88 |
| 500 + | £0.228 | £5.70 |
*price indicative
- RS Stock No.:
- 743-6030
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Length | 3.1mm | |
| Height | 1.2mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type P | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Length 3.1mm | ||
Height 1.2mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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