onsemi PowerTrench N-Channel MOSFET, 19 A, 150 V, 8-Pin MicroFET 2 x 2 FDMC86240
- RS Stock No.:
- 739-6317P
- Mfr. Part No.:
- FDMC86240
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£17.70
(exc. VAT)
£21.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | £1.77 |
| 100 - 499 | £1.53 |
| 500 - 999 | £1.35 |
| 1000 + | £1.23 |
*price indicative
- RS Stock No.:
- 739-6317P
- Mfr. Part No.:
- FDMC86240
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | MicroFET 2 x 2 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 97 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.3mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 3.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type MicroFET 2 x 2 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 97 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.3mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Transistor Material Si | ||
Length 3.3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.