N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-220 onsemi FCP16N60N
- RS Stock No.:
- 739-6147P
- Mfr. Part No.:
- FCP16N60N
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 739-6147P
- Mfr. Part No.:
- FCP16N60N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 16 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 199 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 134.4 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 10.67mm | |
Width | 4.83mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 40.2 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Series | SupreMOS | |
Height | 9.4mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 134.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Width 4.83mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 40.2 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Series SupreMOS | ||
Height 9.4mm | ||
- COO (Country of Origin):
- MY
SupreMOS® MOSFET, Fairchild Semiconductor
Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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