SupreMOS® MOSFET, Fairchild Semiconductor

Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.
The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.
These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	16 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	199 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	134.4 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	4.83mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	40.2 nC @ 10 V
	Transistor Material	Si
	Length	10.67mm
	Maximum Operating Temperature	+150 °C
	Height	9.4mm
	Minimum Operating Temperature	-55 °C
	Series	SupreMOS

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 16 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 199 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 134.4 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 4.83mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 40.2 nC @ 10 V
	Transistor Material Si
	Length 10.67mm
	Maximum Operating Temperature +150 °C
	Height 9.4mm
	Minimum Operating Temperature -55 °C
	Series SupreMOS

N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-220 onsemi FCP16N60N

SupreMOS® MOSFET, Fairchild Semiconductor

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