Nexperia Dual N-Channel MOSFET, 870 mA, 20 V, 6-Pin SOT-363 PMGD280UN,115
- RS Stock No.:
- 725-8329
- Mfr. Part No.:
- PMGD280UN,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 20 units)*
£3.56
(exc. VAT)
£4.28
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
- Plus 2,240 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.178 | £3.56 |
| 100 - 180 | £0.103 | £2.06 |
| 200 - 380 | £0.101 | £2.02 |
| 400 - 980 | £0.099 | £1.98 |
| 1000 + | £0.07 | £1.40 |
*price indicative
- RS Stock No.:
- 725-8329
- Mfr. Part No.:
- PMGD280UN,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 870 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 340 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 0.89 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 870 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 340 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 0.89 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Length 2.2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Dual N-Channel MOSFET 20 V115
- Nexperia Dual N-Channel MOSFET 20 V115
- Nexperia Dual N-Channel MOSFET 60 V115
- Nexperia Dual N-Channel MOSFET 60 V115
- Nexperia Dual N-Channel MOSFET 30 V115
- Nexperia Dual N/P-Channel MOSFET 350 mA 6-Pin SOT-363 NX3008CBKS,115
- Infineon Dual N/P-Channel-Channel MOSFET 20 V, 6-Pin SOT-363 BSD235CH6327XTSA1
- Infineon OptiMOS™ 2 Dual N-Channel MOSFET 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1