Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF
- RS Stock No.:
- 708-4755
- Mfr. Part No.:
- IRF9Z34PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.03
(exc. VAT)
£9.635
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Plus 5 unit(s) shipping from 13 October 2025
- Final 45 unit(s) shipping from 20 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.606 | £8.03 |
| 50 - 120 | £1.446 | £7.23 |
| 125 - 245 | £1.286 | £6.43 |
| 250 - 495 | £1.206 | £6.03 |
| 500 + | £1.124 | £5.62 |
*price indicative
- RS Stock No.:
- 708-4755
- Mfr. Part No.:
- IRF9Z34PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 88 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Length | 10.41mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 88 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Length 10.41mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
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