onsemi N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 NDS7002A

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£1.07

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£1.28

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10 - 90£0.107£1.07
100 - 240£0.092£0.92
250 - 490£0.08£0.80
500 - 990£0.07£0.70
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Packaging Options:
RS Stock No.:
671-1093
Mfr. Part No.:
NDS7002A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Length

2.92mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.93mm

Minimum Operating Temperature

-65 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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