onsemi NDS0605 Type P-Channel MOSFET, 120 mA, 60 V Enhancement, 3-Pin SOT-23 NDS0610

RS Stock No.:: 671-1074
Mfr. Part No.:: NDS0610
Brand:: onsemi

onsemi NDS0605 Type P-Channel MOSFET, 120 mA, 60 V Enhancement, 3-Pin SOT-23 NDS0610

Bulk discount available

Subtotal (1 pack of 20 units)*

£3.68

(exc. VAT)

£4.42

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,800 unit(s) ready to ship
Plus 31,660 unit(s) shipping from 01 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 180	£0.184	£3.68
200 - 480	£0.159	£3.18
500 - 980	£0.138	£2.76
1000 - 1980	£0.121	£2.42
2000 +	£0.11	£2.20

*price indicative

RS Stock No.:: 671-1074
Mfr. Part No.:: NDS0610
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120mA
	Maximum Drain Source Voltage Vds	60V
	Series	NDS0605
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.8nC
	Forward Voltage Vf	-1.5V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	2.92mm
	Standards/Approvals	No
	Height	0.93mm
	Width	1.3 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120mA
	Maximum Drain Source Voltage Vds 60V
	Series NDS0605
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.8nC
	Forward Voltage Vf -1.5V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 2.92mm
	Standards/Approvals No
	Height 0.93mm
	Width 1.3 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.