Renesas N-Channel MOSFET, 52 A, 55 V, 3-Pin DPAK NP52N055SUG-E1-AZ
- RS Stock No.:
- 641-6085
- Mfr. Part No.:
- NP52N055SUG-E1-AZ
- Brand:
- Renesas Electronics
Stock information currently inaccessible
- RS Stock No.:
- 641-6085
- Mfr. Part No.:
- NP52N055SUG-E1-AZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 1.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.1mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 1.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||