STMicroelectronics STW65N Silicon N-Channel MOSFET, 54 A, 650 V, 3-Pin TO247-4 STW65N045M9-4
- RS Stock No.:
- 287-7053
- Mfr. Part No.:
- STW65N045M9-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£307.80
(exc. VAT)
£369.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £10.26 | £307.80 |
60 - 60 | £9.234 | £277.02 |
90 + | £8.311 | £249.33 |
*price indicative
- RS Stock No.:
- 287-7053
- Mfr. Part No.:
- STW65N045M9-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 54 A | |
Maximum Drain Source Voltage | 650 V | |
Series | STW65N | |
Package Type | TO247-4 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 54 A | ||
Maximum Drain Source Voltage 650 V | ||
Series STW65N | ||
Package Type TO247-4 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
Excellent switching performance
Easy to drive
100 percent avalanche tested
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