STMicroelectronics MDmesh M9 Silicon N-Channel MOSFET, 54 A, 650 V, 3-Pin TO-247 STWA65N045M9
- RS Stock No.:
- 151-781
- Mfr. Part No.:
- STWA65N045M9
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£246.39
(exc. VAT)
£295.68
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
- Plus 999,999,960 unit(s) shipping from 13 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £8.213 | £246.39 |
*price indicative
- RS Stock No.:
- 151-781
- Mfr. Part No.:
- STWA65N045M9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 54 A | |
Maximum Drain Source Voltage | 650 V | |
Series | MDmesh M9 | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 54 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M9 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET, I t is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency
Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive
Higher dv/dt capability
Excellent switching performance
Easy to drive
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