Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3
- RS Stock No.:
- 279-9934
- Mfr. Part No.:
- SIJ4108DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 4 units)*
£7.00
(exc. VAT)
£8.40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | £1.75 | £7.00 |
| 60 - 96 | £1.668 | £6.67 |
| 100 - 236 | £1.488 | £5.95 |
| 240 - 996 | £1.463 | £5.85 |
| 1000 + | £1.435 | £5.74 |
*price indicative
- RS Stock No.:
- 279-9934
- Mfr. Part No.:
- SIJ4108DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIJ | |
| Package Type | SO-8L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.13mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIJ | ||
Package Type SO-8L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.13mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SIJ Type N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3
- Vishay SIJ Type N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L
- Vishay SIJ Type N-Channel MOSFET 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3
- Vishay SIJ Type P-Channel MOSFET 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- Vishay SiJA Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay SIA Type N-Channel MOSFET 100 V Enhancement, 7-Pin SC-70-6L
- Vishay SIA Type N-Channel MOSFET 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- Vishay SIA Type N-Channel MOSFET 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3