Vishay Silicon N-Channel MOSFET, 18 A, 600 V, 4-Pin 8 x 8 SIHH155N60EF-T1GE3
- RS Stock No.:
- 279-9916
- Mfr. Part No.:
- SIHH155N60EF-T1GE3
- Brand:
- Vishay
Save 6% when you buy 1000 units
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£4.78
(exc. VAT)
£5.74
(inc. VAT)
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In Stock
- 3,000 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 49 | £4.78 |
| 50 - 99 | £4.69 |
| 100 - 249 | £4.65 |
| 250 - 999 | £4.54 |
| 1000 + | £4.45 |
*price indicative
- RS Stock No.:
- 279-9916
- Mfr. Part No.:
- SIHH155N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | 8 x 8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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